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適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延）、GaAs（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延）、GaAs（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?SiC、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles Provide6/8 inches process
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles